參數(shù)資料
型號(hào): VSC835
廠商: Vitesse Semiconductor Corporation.
英文描述: 34x34 Crosspoint Switch with Signal Detection
中文描述: 34x34交叉點(diǎn)開(kāi)關(guān)信號(hào)檢測(cè)
文件頁(yè)數(shù): 6/18頁(yè)
文件大?。?/td> 174K
代理商: VSC835
VITESSE
Datasheet
VSC835
2.5 Gbits/sec
34x34 Crosspoint Switch with Signal Detection
Page 6
VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 805/388-3700 FAX: 805/987-5896
7/24/00
G52270-0, Rev. 4.1
note 1: measured from falling edge.
note 2: measured from rising edge.
DC Characteristics
(over the specified operating conditions)
Note: Icc Specified with outputs terminated with 50 ohms to +2.0V and Chip Vterm=+2.0V, Vcc = 3.45V
Table 4: Programming Port Interface Timing
Parameter
Description
Min
Max
Units
T
config
T
pdADDR
T
pdRDB
T
pdint
T
pdstate
T
sRDB
T
hRDB
T
sWRB
T
hWRB
T
sCONFIG
T
sCSB
T
pwCONFIG
T
pwWRB
T
pwRDB
T
tsDATA
Switch configuration delay
Data read propagation delay from ADDR
Data read propagation delay from RDB (1)
Interrupt propagation delay from MONCLK (2)
MONCLK to internal state register change delay (2)
ADDR to RDB setup time
RDB to ADDR hold time
WRB setup time (for either ADDR or DATA)
WRB hold time (for either ADDR or DATA)
WRB to CONFIG setup time
CSB setup time (to either WRB or RDB)
CONFIG pulse width (high)
WRB pulse width (low and high)
RDB pulse width (low and high)
DATA tri-state delay (from either RDB or CSB) (2)
-
-
-
-
-
5
3
5
3
1
0
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
30
7
50
6
-
-
-
-
-
-
-
-
-
10
10
10
10
-
Table 5: Power
Parameter
Description
(Max)
Units
I
CC
P
T
V
CC
supply current
Total chip power
V
TERM
supply current with V
TERM
=V
CC
-1.3V
V
TERM
supply current with V
TERM
=V
CC
-2.0V
4060
14
~0
-950
mA
W
mA
mA
I
TERM-V
I
TERM-E
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