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參數(shù)資料
| 型號： | VS28F016SV |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit(1MBitx16) FLASHFILE MEMORY(16M位FLASHFILE存儲器) |
| 中文描述： | 16兆位（1MBitx16）FLASHFILE記憶（1,600位FLASHFILE存儲器） |
| 文件頁數(shù)： | 48/50頁 |
| 文件大?。?/td> | 612K |
| 代理商： | VS28F016SV |
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VS28F016SV, MS28F016SV FlashFile
TM
Memory
5.12 Erase and Word/Byte Write Performance
(3,5)
(Continued)
V
CC
e
5.0V, V
PP
e
5.0V
g
0.5V, T
CSE2
e b
40
§
C to
a
125
§
C, T
CSE1
e b
55
§
C to
a
125
§
C
Sym
Parameter
Notes
Typ
(1)
Units
Test Conditions
Page Buffer Byte Write Time
2,6,7
8
m
s
Page Buffer Word Write Time
2,6,7
16
m
s
t
WHRH
1A
Byte Write Time
2,7
20
m
s
t
WHRH
1B
Word Write Time
2,7
25
m
s
t
WHRH(2)
Block Write Time
2,7
1.4
sec
Byte Write Mode
t
WHRH(3)
Block Write Time
2,7
0.85
sec
Word Write Mode
Block Erase Time
2,7
1.0
sec
Full Chip Erase Time
2,7
32.0
sec
Erase Suspend Latency Time
to Read
4
9
m
s
Auto Erase Suspend Latency
Time to Write
12
m
s
V
CC
e
5.0V
g
0.5V, V
PP
e
12.0V
g
0.6V, T
CSE2
e b
40
§
C to
a
125
§
C, T
CSE1
e b
55
§
C to
a
125
§
C
Sym
Parameter
Notes
Typ
(1)
Units
Test Conditions
Page Buffer Byte Write Time
2,6,7
2.1
m
s
Page Buffer Word Write Time
2,6,7
4.1
m
s
t
WHRH(1)
Word/Byte Write Time
2,7
6
m
s
t
WHRH(2)
Block Write Time
2,7
0.4
sec
Byte Write Mode
t
WHRH(3)
Block Write Time
2,7
0.2
sec
Word Write Mode
Block Erase Time
2
0.6
sec
Full Chip Erase Time
2,7
19.2
sec
Erase Suspend Latency Time
to Read
4
7
m
s
Auto Erase Suspend Latency
Time to Write
10
m
s
NOTES:
1. 25
§
C, and normal voltages.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Specification applies to interrupt latency for single block erase. Suspend latency for erase all unlocked blocks operation
extends the maximum latency time to 270
m
s.
5. Sampled, but not 100% tested. Guaranteed by design.
6. Assumes using the full Page Buffer to Write to Flash (256 bytes or 128 words).
48
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