參數(shù)資料
型號(hào): VS28F016SV
廠商: Intel Corp.
英文描述: 16-Mbit(1MBitx16) FLASHFILE MEMORY(16M位FLASHFILE存儲(chǔ)器)
中文描述: 16兆位(1MBitx16)FLASHFILE記憶(1,600位FLASHFILE存儲(chǔ)器)
文件頁數(shù): 14/50頁
文件大小: 612K
代理商: VS28F016SV
VS28F016SV, MS28F016SV FlashFile
TM
Memory
4.4 VS/MS28F016SVDPerformance Enhancement Command Bus Definitions
Command
Mode
Notes
First Bus Cycle
Second Bus Cycle
Third Bus Cycle
Oper
Addr
Data
(13)
Oper
Addr
Data
(13)
Oper
Addr
Data
Read Extended
Status Register
1
Write
X
xx71H
Read
RA
GSRD
BSRD
Page Buffer Swap
7
Write
X
xx72H
Read Page Buffer
Write
X
xx75H
Read
PA
PD
Single Load to
Page Buffer
Write
X
xx74H
Write
PA
PD
Sequential Load to
Page Buffer
x8
4,6,10
Write
X
xxE0H
Write
X
BCL
Write
X
BCH
x16
4,5,6,10
Write
X
xxE0H
Write
X
WCL
Write
X
WCH
Page Buffer Write
to Flash
x8
3,4,9,10
Write
X
xx0CH
Write
A
0
BC(L,H)
Write
WA
BC(H,L)
x16
4,5,10
Write
X
xx0CH
Write
X
WCL
Write
WA
WCH
Two-Byte Write
x8
3
Write
X
xxFBH
Write
A
0
WD(L,H)
Write
WA
WD(H,L)
Lock Block/
Confirm
Write
X
xx77H
Write
BA
xxD0H
Upload Status
Bits/Confirm
2
Write
X
xx97H
Write
X
xxD0H
Upload Device
Information/
Confirm
11
Write
X
xx99H
Write
X
xxD0H
Erase All Unlocked
Blocks/Confirm
Write
X
xxA7H
Write
X
xxD0H
RY/BY
Y
Enable to
Level-Mode
8
Write
X
xx96H
Write
X
xx01H
RY/BY
Y
Pulse-
On-Write
8
Write
X
xx96H
Write
X
xx02H
RY/BY
Y
Pulse-
On-Erase
8
Write
X
xx96H
Write
X
xx03H
RY/BY
Y
Disable
8
Write
X
xx96H
Write
X
xx04H
RY/BY
Y
Pulse-
On-Write/Erase
8
Write
X
xx96H
Write
X
xx05H
Sleep
12
Write
X
xxF0H
Abort
Write
X
xx80H
ADDRESS
BA
e
Block Address
PA
e
Page Butter Address
RA
e
Extended Register Address
WA
e
Write Address
X
e
Don’t Care
DATA
AD
e
Array Data
PD
e
Page Buffer Data
BSRD
e
BSR Data
GSRD
e
GSR Data
WC (L,H)
e
Word Count (Low, High)
BC (L,H)
e
Byte Count (Low, High)
WD (L,H)
e
Write Data (Low, High)
14
相關(guān)PDF資料
PDF描述
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