參數(shù)資料
型號： VNW100N04
廠商： 意法半導(dǎo)體
英文描述： ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
中文描述： “OMNIFET”：充分AUTOPROTECTED功率MOSFET
文件頁數(shù)： 3/11頁
文件大?。?/td> 135K
代理商： VNW100N04
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 50 A
R
gen
= 10
110
500
1000
600
250
900
1800
1000
ns
ns
ns
ns
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 15 V
V
gen
= 10 V
(see figure 3)
I
d
= 50 A
R
gen
= 1000
2.2
3.5
22
12
3.5
6
30
18
μ
s
μ
s
μ
s
μ
s
A/
μ
s
(di/dt)
on
Turn-on Current Slope
V
DD
= 15 V
V
in
= 10 V
V
DD
= 15 V
I
D
= 50 A
R
gen
= 10
I
D
= 50 A
55
Q
i
Total Input Charge
V
in
= 10 V
190
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
SD
(
)
t
rr
(
)
Forward On Voltage
I
SD
= 50 A
V
in
= 0
1.6
V
Q
rr
(
)
I
RRM
(
)
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 50 A
V
DD
= 30 V
(see test circuit, figure 5)
di/dt = 100 A/
μ
s
T
j
= 25
C
800
5
15
ns
μ
C
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
lim
Drain Current Limit
V
in
= 10 V
V
in
= 5 V
V
in
= 10 V
V
in
= 5 V
V
DS
= 13 V
V
DS
= 13 V
70
70
100
100
140
140
A
A
μ
s
μ
s
o
C
t
dlim
(
)
Step Response
Current Limit
50
130
80
200
T
jsh
(
)
Overtemperature
Shutdown
Overtemperature Reset
170
T
jrs
(
)
I
gf
(
)
155
o
C
Fault Sink Current
V
in
= 10 V
V
in
= 5 V
starting T
j
= 25
o
C
V
in
= 10 V
V
DS
= 13 V
V
DS
= 13 V
50
20
mA
mA
E
as
(
)
Single Pulse
Avalanche Energy
V
DD
= 20 V
L = 10 mH
R
gen
= 1 K
4
J
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Parameters guaranteed by design/characterization
VNW100N04
3/11
相關(guān)PDF資料
PDF描述
VNW35NV04 “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
VNW50N04A THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:100kR; Tolerance, resistance:+/-1%; Beta value:4540; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes
VNW50N04 ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET
VO1815-3 Peripheral IC
VO1814 Peripheral IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNW100N04 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH TO-247
VNW100N04-E 功能描述:MOSFET N-Ch 100V 42A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNW35NV04 功能描述:電源開關(guān) IC - 配電 VIPOWER RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VNW35NV04-E 功能描述:電源開關(guān) IC - 配電 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
VNW50N04 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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