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參數(shù)資料
| 型號： | VNW100N04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | VNW100N04 |
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VNW100N04
11/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VNW35NV04 | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04A | THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:100kR; Tolerance, resistance:+/-1%; Beta value:4540; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| VNW50N04 | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| VO1815-3 | Peripheral IC |
| VO1814 | Peripheral IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNW100N04 | 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH TO-247 |
| VNW100N04-E | 功能描述:MOSFET N-Ch 100V 42A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNW35NV04 | 功能描述:電源開關(guān) IC - 配電 VIPOWER RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNW35NV04-E | 功能描述:電源開關(guān) IC - 配電 OMNIFETII FULLY AUTO PROTECT Pwr MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNW50N04 | 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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