- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359407 > VNW50N04A (意法半導(dǎo)體) THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:100kR; Tolerance, resistance:+/-1%; Beta value:4540; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號： | VNW50N04A |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 熱敏電阻 |
| 英文描述： | THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:100kR; Tolerance, resistance:+/-1%; Beta value:4540; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes |
| 中文描述： | “OMNIFET”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 126K |
| 代理商： | VNW50N04A |
VNW50N04A
”O(jiān)MNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
February 1998
BLOCK DIAGRAM
TYPE
V
clamp
R
DS(on)
0.012
I
lim
VNW50N04A
42 V
50 A
I
LINEAR CURRENT LIMITATION
I
THERMAL SHUT DOWN
I
SHORTCIRCUIT PROTECTION
I
INTEGRATEDCLAMP
I
LOW CURRENT DRAWN FROM INPUT PIN
I
DIAGNOSTIC FEEDBACK THROUGHINPUT
PIN
I
ESDPROTECTION
I
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I
COMPATIBLE WITH STANDARD POWER
MOSFET
I
STANDARD TO-247 PACKAGE
DESCRIPTION
The VNW50N04A is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedbackcan be detected by monitoring the
voltageat the input pin.
1
2
3
TO-247
1/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VNW50N04 | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| VO1815-3 | Peripheral IC |
| VO1814 | Peripheral IC |
| VO1815-1 | Peripheral IC |
| VO1815-2 | Peripheral IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNW50N04A_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04-E | 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNY3 | 制造商:Carlo Gavazzi 功能描述:LVL SNSR COND 3 PROBE NYLON |
| VNYI3 | 制造商:Carlo Gavazzi 功能描述: |
| VNYI4 | 制造商:Carlo Gavazzi 功能描述:Sensor, Conductive, Level Probe, 4 SS Insulated Electrodes, 1 Meter 制造商:Carlo Gavazzi 功能描述:CONDUCTIVE SENSORS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。