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參數(shù)資料
| 型號： | VNW50N04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 135K |
| 代理商： | VNW50N04 |
VNW50N04
”O(jiān)MNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
August 1996
BLOCK DIAGRAM
TYPE
V
clamp
R
DS(on)
0.012
I
lim
VNW50N04
42 V
50 A
I
LINEAR CURRENT LIMITATION
I
THERMAL SHUT DOWN
I
SHORTCIRCUIT PROTECTION
I
INTEGRATEDCLAMP
I
LOW CURRENT DRAWN FROM INPUT PIN
I
DIAGNOSTIC FEEDBACK THROUGHINPUT
PIN
I
ESDPROTECTION
I
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
I
COMPATIBLE WITH STANDARD POWER
MOSFET
I
STANDARD TO-247 PACKAGE
DESCRIPTION
The VNW50N04 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedbackcan be detected by monitoring the
voltageat the input pin.
1
2
3
TO-247
1/11
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相關(guān)代理商/技術(shù)參數(shù) |
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| VNW50N04A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:”O(jiān)MNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04A_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FULLY AUTOPROTECTED POWER MOSFET |
| VNW50N04-E | 功能描述:MOSFET N-Ch 42V 50A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| VNYI3 | 制造商:Carlo Gavazzi 功能描述: |
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