參數(shù)資料
型號(hào): VNS1NV04D
廠商: 意法半導(dǎo)體
英文描述: “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述: “OMNIFET二”:充分AUTOPROTECTED功率MOSFET
文件頁數(shù): 9/14頁
文件大?。?/td> 244K
代理商: VNS1NV04D
9/14
VNS1NV04D
1
1
Static Drain-Source On Resistance Vs. Id
Turn On Current Slope
Transfer Characteristics
Turn On Current Slope
Input Voltage Vs. Input Charge
Turn off drain source voltage slope
0
500
1000
1500
2000
2500
Rg(ohm)
0
1
2
3
4
5
6
di/dt(A/us)
Vin=5V
Vdd=15V
Id=1.5A
0
500
1000
1500
2000
2500
Rg(ohm)
0.2
0.4
0.6
0.8
1
1.2
1.4
di/dt(A/us)
Vin=3.5V
Vdd=15V
Id=1.5A
0
1
2
3
4
5
6
Qg (nC)
0
1
2
3
4
5
6
Vin (V)
Vds=12V
Id=0.5A
0
500
1000
1500
2000
2500
Rg(ohm)
0
50
100
150
200
250
300
350
dv/dt(V/us)
Vin=5V
Vdd=15V
Id=0.5A
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
Vin(V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
Idon(A)
Vds=13.5V
Tj=150oC
Tj=25oC
Tj=-40oC
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
Id(A)
0
50
100
150
200
250
300
350
400
450
500
Rds(on) (mohms)
Tj=25oC
Tj=150oC
Tj=-40oC
Vin=5V
Vin=3.5V
Vin=3.5V
Vin=5V
Vin=5V
Vin=3.5V
相關(guān)PDF資料
PDF描述
VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET
VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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VNS7NV0413TR THERMISTOR, PTC; Series:B598; Thermistor type:PTC; Resistance:6R; Tolerance, resistance:+/-25%; Temp, op. max:125(degree C); Voltage, operating:160V; Case style:Radial; Current, tripping:0.8A; Diameter, body:17.5mm; Length, RoHS Compliant: Yes
VNT008D TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5.77A I(D) | TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNS1NV04D13TR 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04D-E 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DP-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DPTR-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DTR-E 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube