參數(shù)資料
型號： VNS1NV04D
廠商： 意法半導體
英文描述： “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述： “OMNIFET二”：充分AUTOPROTECTED功率MOSFET
文件頁數(shù)： 4/14頁
文件大?。?/td> 244K
代理商： VNS1NV04D
4/14
VNS1NV04D
ELECTRICAL CHARACTERISTICS (continued)
(T
j
=25°C, unless otherwise specified)
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
j
< 150°C, unless otherwise specified)
Symbol
Parameter
I
lim
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
T
jrs
Overtemperature Reset
I
gf
Fault Sink Current
(*) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
(*)
Forward
Transconductance
Output Capacitance
V
DD
=13V; I
D
=0.5A
2
S
C
OSS
V
DS
=13V; f=1MHz; V
IN
=0V
90
pF
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test Conditions
Min
Typ
70
170
350
200
0.25
1.3
1.8
1.2
Max
200
500
1000
600
1.0
4.0
5.5
4.0
Unit
ns
ns
ns
ns
μ
s
μ
s
μ
s
μ
s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=15V; I
D
=0.5A
V
gen
=5V; R
gen
=R
IN MINn
=330
(see figure 1)
V
DD
=15V; I
D
=0.5A
V
gen
=5V; R
gen
=2.2K
(see figure 1)
(dI/dt)
on
Turn-on Current Slope
V
DD
=15V; I
D
=1.5A
V
gen
=5V; R
gen
=R
IN MINn
=330
V
DD
=12V; I
D
=0.5A; V
IN
=5V
I
gen
=2.13mA (see figure 5)
5.0
A/
μ
s
Q
i
Total Input Charge
5.0
nC
Symbol
V
SD
(*)
t
rr
Q
rr
I
RRM
Parameter
Test Conditions
Min
Typ
0.8
205
100
0.75
Max
Unit
V
ns
μ
C
A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=0.5A; V
IN
=0V
I
SD
=0.5A; dI/dt=6A/
μ
s
V
DD
=30V; L=200
μ
H
(see test circuit, figure 2)
Test Conditions
Min
1.7
Typ
Max
3.5
Unit
A
V
IN
=5V; V
DS
=13V
V
IN
=5V; V
DS
=13V
t
dlim
2.0
μ
s
T
jsh
150
175
200
°C
135
10
°C
mA
V
IN
=5V; V
DS
=13V; T
j
=T
jsh
starting T
j
=25°C; V
DD
=24V
V
IN
=5V R
gen
=R
IN MINn
=330
;
L=50mH
(see figures 3 & 4)
15
20
E
as
Single Pulse
Avalanche Energy
55
mJ
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNS1NV04D13TR 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04D-E 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DP-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DPTR-E 功能描述:MOSFET OMNIFET POWER MOSFET 40V 1.7 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNS1NV04DTR-E 功能描述:MOSFET N-Ch 40V 1.7A Omni RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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