參數(shù)資料
型號(hào)： VNN7NV0413TR
廠商： 意法半導(dǎo)體
英文描述： “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述： “OMNIFET二”：充分AUTOPROTECTED功率MOSFET
文件頁數(shù)： 1/29頁
文件大小： 488K
代理商： VNN7NV0413TR
February 2003
1/29
VNN7NV04 / VNS7NV04
/
VND7NV04 / VND7NV04-1
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
1
n
LINEAR CURRENT LIMITATION
n
THERMAL SHUT DOWN
n
SHORT CIRCUIT PROTECTION
n
INTEGRATED CLAMP
n
LOW CURRENT DRAWN FROM INPUT PIN
n
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n
ESD PROTECTION
n
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The
VNN7NV04,
VNS7NV04,
VND7NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
VND7NV04
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protects the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
TYPE
R
DS(on)
I
lim
V
clamp
VNN7NV04
VNS7NV04
VND7NV04
VND7NV04-1
60 m
6 A
40 V
SOT-223
SO-8
TO251 (IPAK)
1
2
2
3
1
3
3
2
1
TO252 (DPAK)
BLOCK DIAGRAM
Overvoltage
Clamp
Gate
Control
Linear
Current
Limiter
DRAIN
SOURCE
1
2
3
Over
Temperature
INPUT
FC01000
ORDER CODES
TUBE
VNN7NV04
VNS7NV04
PACKAGE
SOT-223
SO-8
TO-252 (DPAK) VND7NV04
TO-251 (IPAK)
T&R
VNN7NV0413TR
VNS7NV04
13TR
VND7NV0413TR
VND7NV04-1
-
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VNN7NV04PTR-E 功能描述:MOSFET 40V 6A OMNIFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNN7NV04TR-E 功能描述:功率驅(qū)動(dòng)器IC N-Ch 40V 6A OmniFET RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
VNP10N06 功能描述:MOSFET N-Ch 60V 10A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNP10N06-E 功能描述:MOSFET N-Ch 60V 10A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VNP10N06FI 功能描述:電源開關(guān) IC - 配電 N-Ch 60V 10A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
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