
74
V59C1G01(408/808/168)QB Rev. 1.1 December 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QB
Input Setup Time (fast slew
rate)
tIS
250
-
200
-
175
-
175
-
125
-
ps
15,17
Input Hold Time (fast slew
rate)
tIH
375
-
275
-
250
-
250
-
200
-
ps
15,17
Input Pulse Width
tIPW
0.60
-
0.60
-
0.60
-
0.60
-
0.60
-
CLK
Write DQS High Level Width
tDQSH
0.35
CLK
Write DQS Low Level Width
tDQSL
0.35
CLK
CLK to First Rising edge of
DQS-In
tDQSS
-0.25
tCK
+0.25
tCK
-0.25
tCK
+0.25
tCK
-0.25
tCK
+0.25
tCK
-0.25
tCK
+0.25
tCK
-0.25
tCK
+0.25
tCK
CLK
Data-In Setup Time to DQS-
In (DQ & DM) Differential
tDS
100
-
100
-
50
-
50
-
0
-
ps
16,17,
18
Data-in Hold Time to DQS-In
(DQ & DM) Differential
tDH
225
-
175
-
125
-
125
-
75
-
ps
16,17,
18
DQS falling edge to CLK ris-
ing Setup Time
tDSS
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
CLK
DQS falling edge from CLK
rising Hold Time
tDSH
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
CLK
DQ & DM Input Pulse Width
tDIPW
0.35
-
0.35
-
0.35
-
0.35
-
0.35
-
CLK
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
CLK
Read DQS Postamble Time
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
CLK
Write DQS Preamble Setup
Time
tWPRES
0
-
0
-
0
-
0
-
0
-
CLK
Write DQS Preamble Hold
Time
tWPREH
0.25
-
0.25
-
0.25
-
0.25
-
0.25
-
CLK
Write DQS Preamble Time
tWPRE
0.35
-
0.35
-
0.35
-
0.35
-
0.35
-
CLK
10
Write DQS Postamble Time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
CLK
10
Internal read to precharge
command delay
tRTP
7.5
-
7.5
-
7.5
-
7.5
-
7.5
-
ns
Internal write to read com-
mand delay
tWTR
7.5
-
7.5
-
7.5
-
7.5
-
7.5
-
ns
13
Data out high impedance
time from CLK/CLK
tHZ
-
tAC(max)
-
tAC(max)
-
tAC(max)
-
tAC(max)
-
tAC(max)
ns
7
DQS/DQS low impedance
time from CLK/CLK
tLZ(DQS)
tAC(min) tAC(max) tAC(min) tAC(max) tAC(min) tAC(max) tAC(min) tAC(max) tAC(min) tAC(max)
ns
7
DQ low impedance time from
CLK/CLK
tLZ(DQ)
2xtAC(min) tAC(max) 2xtAC(min) tAC(max) 2xtAC(min) tAC(max) 2xtAC(min) tAC(max) 2xtAC(min) tAC(max)
ns
7
Mode Register Set Delay
tMRD
2-
2
-
2
-
2
-
CLK
9
MRS command to ODT up-
date delay
tMOD
012012
0
12
0
12
0
12
ns
OCD drive mode output de-
lay
tOIT
012012
0
12
0
12
0
12
ns
Parameter
Symbol
(DDR2-533)
-37
(DDR2-667)
-3
(DDR2-800)
-25A
(DDR2-800)
-25
(DDR2-1066)
-19A
Unit Note
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max