參數(shù)資料
型號(hào)： V59C1G01168QBLJ-25I
廠商： PROMOS TECHNOLOGIES INC
元件分類： DRAM
英文描述： DDR DRAM, PBGA84
封裝： GREEN, FBGA-84
文件頁(yè)數(shù)： 57/82頁(yè)
文件大?。?/td> 995K
代理商： V59C1G01168QBLJ-25I
60
V59C1G01(408/808/168)QB Rev. 1.1 December 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QB
Power and ground clamps are required on the following input only pins:
a) BA0-BAx
b) A0-Axx
c) RAS
d) CAS
e) WE
f) CS
g) ODT
h) CKE
AC overshoot/undershoot specification for clock, data, strobe, and mask pins:
DQ, (U/L/R)DQS, (U/L/R)DQS, DM, CK, CK
Parameter
Specification
DDR2-667
DDR2-800
Maximum peak amplitude allowed for overshoot area (See Figure 75):
0.5 V
Maximum peak amplitude allowed for undershoot area (See Figure 75):
0.5 V
Maximum overshoot area above VDDQ (See Figure 75).
0.23 V-ns
Maximum undershoot area below VSSQ (See Figure 75).
0.23 V-ns
Overshoot Area
Maximum Amplitude
VDD
Undershoot Area
Maximum Amplitude
VSS
Volts
(V)
Time (ns)
AC overshoot and undershoot definition for address and control pins
Overshoot Area
Maximum Amplitude
VDDQ
Undershoot Area
Maximum Amplitude
VSSQ
Volts
(V)
Time (ns)
AC overshoot and undershoot definition for clock, data, strobe, and mask pins
AC & DC operating conditions (cont'd)
Parameter
DDR2-533 DDR2-667 DDR2-800 DDR2-1066
Unit
Maximum peak amplitude allowed for overshoot area
0.50.5
V
Maximum peak amplitude allowed for undershoot area
0.50.5
V
Maximum overshoot area above VDDQ
0.28
0.23
0.19
V.ns
Maximum undershoot area below VSSQ
0.28
0.23
0.19
V.ns
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