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參數(shù)資料
| 型號(hào)： | UPG110P |
| 廠商： | NEC Corp. |
| 英文描述： | 2 to 8 GHz WIDE BAND AMPLIFIER CHIP |
| 中文描述： | 2至8GHz寬帶放大器芯片 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | UPG110P |
μ
PG110P
6
Recommended Wire Length
1. 500 to 1 000
μ
m for Input (the longer the wire, the better the VSWR)
2. 200 to 500
μ
m for Output (the shorter the wire, the better the VSWR)
3. It should be bonded via a chip capacitor for V
DD
.
Wire length is 200 to 500
μ
m
4. There are five GND pads but GND pad <2> is not used.
Wire length is 200
μ
m for <1>, <3> and <4>.
Less than 300
μ
m for <5>.
Chip Size: 1.1
×
1.3 mm
t = 140
μ
m
Pad Size : 100
×
100
μ
m
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