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參數(shù)資料
| 型號： | UPG110P |
| 廠商： | NEC Corp. |
| 英文描述： | 2 to 8 GHz WIDE BAND AMPLIFIER CHIP |
| 中文描述： | 2至8GHz寬帶放大器芯片 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 50K |
| 代理商： | UPG110P |
μ
PG110P
5
RECOMMENDED CHIP ASSEMBLY CONDITIONS
Die Attachment
Atmosphere
Temperature : 320
±
5
°
C
AuSn Preform : 0.5
×
0.5
×
0.05
t
(mm), 1 pce.
*
The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not
be used.
Base Material : CuW, Cu, KV
*
Other material should not be used.
Epoxy Die Attach is not recommended.
: N
2
gas
Bonding
Machine
: TCB
* USB is not recommended
: 30
μ
m diameter Au wire
Temperature : 260
±
5
°
C
Strength
: 31
±
3 g
Atmosphere
: N
2
gas
Wire
Chip Bonding Diagram
V
DD
50 to
100 m
200 to 500 m
V
DD
GND
less than 300 m
5
4
3
2
1
500 to
1 000 m
IN
GND
GND
GND
GND
OUT
not used
less than 200 m
200 to
500 m
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