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參數(shù)資料
| 型號(hào)： | UPG110P |
| 廠商： | NEC Corp. |
| 英文描述： | 2 to 8 GHz WIDE BAND AMPLIFIER CHIP |
| 中文描述： | 2至8GHz寬帶放大器芯片 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 50K |
| 代理商： | UPG110P |
1989
DATA SHEET
GaAs INTEGRATED CIRCUIT
μ
PG110P
DESCRIPTION
The
μ
PG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And
the device is available in chip form. The
μ
PG110P is suitable for the gain stage required high gain characteristic of
the microwave communication system and the measurement equipment.
FEATURES
Ultra wide band
High Power Gain : G
P
= 15 dB TYP.
Medium Power
: P
O(1 dB)
= +14 dBm TYP. @f = 2 to 8 GHz
: 2 to 8 GHz
@f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER
FORM
μ
PG110P
Chip
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Supply Voltage
Input Voltage
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
V
DD
V
IN
P
in
P
tot
*
1
T
opr
*
2
T
stg
+10
V
V
–5 to +0.6
+10
1.5
–65 to +125
–65 to +125
dBm
W
°
C
°
C
*1
Mounted with AuSn hard solder
*2
The temperature of base material beside the chip
RECOMMENDED OPERATING CONDITIONS (T
A
= 25
°
C)
Supply Voltage
Input Power
V
DD
P
in
+8
±
0.2
–5
V
dBm
Document No. P11882EJ2V0DS00 (2nd edition)
(Previous No. ID-2454)
Date Published September 1996 P
Printed in Japan
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
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