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參數(shù)資料
| 型號： | UPG110P |
| 廠商： | NEC Corp. |
| 英文描述： | 2 to 8 GHz WIDE BAND AMPLIFIER CHIP |
| 中文描述： | 2至8GHz寬帶放大器芯片 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | UPG110P |
μ
PG110P
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
*3
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Supply Current
I
DD
65
135
180
mA
V
DD
= +8 V
f = 2 to 8 GHz
Power Gain
G
P
12
15
dB
Gain Flatness
G
P
±
1.5
dB
Input Return Loss
RL
in
6
10
dB
Output Return Loss
RL
out
7
10
dB
Isolation
ISL
30
40
dB
Output Power at 1 dB
Gain Compression Point
P
O(1 dB)
10
14
dBm
*3
These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1
.
Fig. 1 4 pin Ceramic Package
4.5 MAX.
4
4.1 MIN.
0
0
4
1
0
+
–
0.6
± 0.06
Top View
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