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參數(shù)資料
| 型號(hào)： | UPD16878 |
| 廠商： | NEC Corp. |
| 英文描述： | MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT |
| 中文描述： | 單片四H橋驅(qū)動(dòng)電路 |
| 文件頁(yè)數(shù)： | 29/32頁(yè) |
| 文件大?。?/td> | 242K |
| 代理商： | UPD16878 |
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Data Sheet S15974EJ1V0DS
29
μ
PD16878
8. RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below. If other
soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult
with our sales offices.
For more details, refer to our document
“
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
”
(C10535E)
.
Type of Surface Mount Device
μ
PD16878GS-BGG: 38-pin plastic shrink SOP (7.62 mm (300))
Process
Soldering conditions
Symbol
Infrared Ray Reflow
Peak temperature: 235
°
C or below (Package surface temperature),
Reflow time: 30 seconds or less (at 210
°
C or higher),
Maximum number of reflow processes: 3 time or less,
Number of days: None
Flux: Rosin-based flux with low chlorine content (chlorine 0.2 Wt% or below) is
recommended.
Note
,
IR35-00-3
Vapor Phase Soldering
Peak temperature: 215
°
C or below (Package surface temperature),
Reflow time: 40 seconds or less (at 200
°
C or higher),
Maximum number of reflow processes: 3 time or less,
Number of days: None
Flux: Rosin-based flux with low chlorine content (chlorine 0.2 Wt% or below) is
recommended.
Note
,
VP15-00-3
Wave Soldering
Solder temperature: 260
°
C or below, Flow time: 10 seconds or less,
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120
°
C or below (Package surface temperature),
Flux: Rosin-based flux with low chlorine content (chlorine 0.2 Wt% or below) is
recommended.
WS60-00-1
Partial Heating Method
Pin temperature: 300
°
C or below,
Heat time: 3 seconds or less (Per each side of the device).
Note
Number of days the device can be stored after the dry pack has been opened, at conditions of 25
°
C, 65%RH.
Caution Apply only one kind of soldering condition to a device, except for
“
partial heating method
”
, or the
device will be damaged by heat stress.
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