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| 型號： | UPC29S78 |
| 英文描述： | Useage of Three-Terminal Regulators | User＇s Manual[05/2000] |
| 中文描述： | 使用三端穩(wěn)壓器|用戶手冊[05/2000] |
| 文件頁數(shù)： | 32/35頁 |
| 文件大小： | 187K |
| 代理商： | UPC29S78 |
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User’s Manual G12702EJ8V0UM00
6
Figure 2-2. Structure of Resistor
Separation region
Base diffused resistor
Base pinch resistor
Pinch
region
Separation region
Separation
region
Epitaxial layer
electrode
Resistor
electrode
Resistor
electrode
Resistor
electrode
Resistor
electrode
P-type diffusion
layer
P-type diffusion
layer
P-type substrate
p
n+
n
n+ diffusion layer
Figure 2-3. Structure of Capacitor
Separation region
Junction capacitor
MOS capacitor
AI electrode
P-type substrate
n+
+
n
n+
p
pp
Oxide
layer
Separation region
n+
n
p
There is a point to heed in applying power supply ICs. It is that a method known as "junction separation" is used
as the method of electrically separating each of the elements above. By connecting a separation region so that it is
formed by a P-type semiconductor and is the same lowest potential as the substrate, the element region and the
separation region are electrically separated and insulated by being in (PN junction) reverse bias states. If for some
reason the potential of this separation region becomes a higher potential than the element region (for example the
NPN transistor collector region in Figure 2-1), normal operation cannot be expected since the PN junction enters a
forward bias state and the separation state between the elements cannot be maintained. For example, when using a
positive output three-terminal regulator, the GND pin always must be made a lower potential than the potential of
other pins.
2.2 About Power Supply IC Equivalent Circuits
Equivalent circuits that are shown in data sheets are so designated assuming the premise of the preceding
section (that separation regions and substrate are made the lowest potential). Be careful not to reference these
when this premise is violated.
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