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參數(shù)資料
| 型號： | UPA653TT |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | UPA653TT |
Data Sheet G16205EJ1V0DS
5
μ
PA653TT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
D
0
- 0.01
100
200
300
400
- 0.1
- 1
- 10
V
GS
= –10 V
Pulsed
–25°C
T
A
= 125°C
75°C
25°C
I
D
- Drain Current - A
R
D
0
100
200
300
400
- 0.01
- 0.1
- 1
- 10
V
GS
= –4.5 V
Pulsed
–25°C
T
A
= 125°C
75°C
25°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
R
D
0
100
200
300
400
- 0.01
- 0.1
- 1
- 10
V
= –4.0 V
Pulsed
–25°C
T
A
= 125°C
75°C
25°C
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
10
100
1000
- 0.1
- 1
- 10
V
DD
= –15 V
V
GS
= –10 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
C
i
,
o
,
r
10
100
1000
- 0.1
- 1
- 10
- 100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
I
F
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
= 0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
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