參數(shù)資料
型號: UPA653TT
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 4/8頁
文件大小: 70K
代理商: UPA653TT
Data Sheet G16205EJ1V0DS
4
μ
PA653TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
- 1
- 2
- 3
- 4
- 5
0
- 0.2
- 0.4
- 0.6
- 0.8
Pulsed
–4.0 V
V
GS
= –10 V
–4.5 V
V
DS
- Drain to Source Voltage - V
I
D
- 0.0001
- 0.001
- 0.01
- 0.1
- 1
- 10
- 100
0
- 1
- 2
- 3
- 4
- 5
- 6
V
DS
= –10 V
Pulsed
–25°C
T
A
= 125°C
75°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
- 1.2
- 1.4
- 1.6
- 1.8
- 2
- 2.2
-50
0
50
100
150
V
DS
= –10 V
I
D
= –1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
100
- 0.01
- 0.1
- 1
- 10
V
DS
= –10 V
Pulsed
125°C
T
A
= –25°C
75°C
25°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
0
100
200
300
400
-50
0
50
100
150
I
D
= –1.5 A
Pulsed
V
GS
= –4.0 V
–10 V
–4.5 V
T
ch
- Channel Temperature -
°
C
R
D
0
100
200
300
400
0
- 5
- 10
- 15
- 20
Pulsed
I
D
= –1.5 A
V
GS
- Gate to Source Voltage - V
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