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參數(shù)資料
| 型號(hào)： | UPA653TT |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | UPA653TT |
Data Sheet G16205EJ1V0DS
3
μ
PA653TT
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm, t
≤
5 sec.
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- 0.01
- 0.1
- 1
- 10
- 100
- 0.1
- 1
- 10
- 100
100 ms
10 ms
I
D(pulse)
I
D(DC)
R
DS(on)
Limited
(V
GS
= –10 V)
5 s
Single Pulse
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
PW = 1 ms
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
1
10
100
1000
Single Pulse
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
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