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參數(shù)資料
| 型號： | UPA653TT |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | UPA653TT |
Data Sheet G16205EJ1V0DS
2
μ
PA653TT
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
30 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
10 V, I
D
=
1.0 mA
m
10
2.5
μ
A
Gate Cut-off Voltage
V
GS(off)
1.5
1.8
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
10 V, I
D
=
1.5 A
1.0
2.9
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
10 V, I
D
=
1.5 A
132
165
m
R
DS(on)2
V
GS
=
4.5 V, I
D
=
1.5 A
200
267
m
R
DS(on)3
V
GS
=
4.0 V, I
D
=
1.5 A
228
304
m
Input Capacitance
C
iss
V
DS
=
10 V
175
pF
Output Capacitance
C
oss
V
GS
= 0 V
56
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
25
pF
Turn-on Delay Time
t
d(on)
V
DD
=
15 V, I
D
=
1.5 A
12
ns
Rise Time
t
r
V
GS
=
10 V
40
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
128
ns
Fall Time
t
f
82
ns
Total Gate Charge
Q
G
V
DD
=
24 V
3.4
nC
Gate to Source Charge
Q
GS
V
GS
=
10 V
0.6
nC
Gate to Drain Charge
Q
GD
I
D
=
2.5 A
1.0
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 2.5 A, V
GS
= 0 V
0.90
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
τ
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
Wave Form
Wave Form
V
GS (
)
V
DS (
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
V
GS
V
DS
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