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參數(shù)資料
| 型號： | UPA611TA |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | UPA611TA |
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1999
MOS FIELD EFFECT TRANSISTOR
μ
PA611TA
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D11707EJ1V0DS00 (1st edition)
August 1999 NS CP(K)
DESCRIPTION
The
μ
PA611TA is a switching device which can be driven directly by a
2.5-V power source.
The
μ
PA611TA has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA611TA
SC-74 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
30
V
Gate to Source Voltage
V
GSS
±20
V
Drain Current (DC)
Drain Current (pulse)
Note
I
D(DC)
±0.1
A
I
D(pulse)
±0.4
A
Total Power Dissipation
P
T
300
(TOTAL)
mW
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to +150
°C
Note
PW
≤
10
μ
s, Duty Cycle
≤
1 %
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
2.9 ±0.2
1.9
0.95 0.95
0.32
+0.1
1
2
+
0
–
0.16
+0.1
0 to 0.1
0.8
1.1 to 1.4
EQUIVALENT CIRCUIT
(1/2 Circuit)
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
PIN CONNECTION (Top View)
6
5
4
1
2
3
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
Marking : IB
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| UPA611TA-T1-A | 功能描述:MOSFET DL N-CH 30V 100MA SC-74 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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| UPA620TT | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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