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參數(shù)資料
| 型號(hào)： | UPA651TT |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | UPA651TT |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA651TT
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
G16203EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
2002
DESCRIPTION
The
μ
PA651TT is a switching device, which can be driven directly by a
1.8 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
1.8 V drive available
Low on-state resistance
R
DS(on)1
= 69 m
MAX. (V
GS
=
4.5 V, I
D
=
2.5 A)
R
DS(on)2
= 88 m
MAX. (V
GS
=
2.5 V, I
D
=
2.5 A)
R
DS(on)3
= 142 m
MAX. (V
GS
=
1.8 V, I
D
=
1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA651TT
6pinWSOF (1620)
Marking: WE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
A
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Note2
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
m
8.0
m
5.0
m
20
0.2
1.4
150
V
V
A
A
W
W
°C
°C
55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.05 S
2.0±0.2
0
0
2
1
0.65
0.65
0
~
0.05
S
MAX. 0.8
0
+
0
0.2
+0.1
0.05
0.1
S
M
5
6
4
3
1
2
1,2,5,6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相關(guān)PDF資料 |
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| UPA652TT | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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| UPA672T | N-CHANNEL MOS FET ARRAY FOR SWITCHING |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA651TT-E1-A | 功能描述:MOSFET P-CH 20V 6-WSOF RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| UPA651TT-E2-A | 功能描述:MOSFET P-CH 20V 6-WSOF RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| UPA652 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:UPA652TT Data Sheet | Data Sheet[09/2002] |
| UPA652TT | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA653 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:UPA653TT Data Sheet | Data Sheet[09/2002] |
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