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參數(shù)資料
| 型號(hào)： | UPA1760 |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1760 |
Data Sheet G13891EJ1V0DS00
3
μ
PA1760
TYPICAL CHARACTERISTICS (T
A
= 25°C)
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
0.1
Pulsed
V
DS
=
10
V
1
2
3
4
5
1
10
100
T
A
=125C
T
A
=75C
T
A
=25C
T
A
=
25C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0.0
0.8
1.2
1.6
10
0.4
Pulsed
0
5
20
30
25
V
GS
=10
V
V
GS
=4.0
V
V
GS
=4.5
V
15
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
|
V
=10V
Pulsed
1
1
10
100
10
100
0.1
0.1
T
A
=75C
T
A
=125C
T
A
=
25C
T
A
= 25C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
V
GS
- Gate to Source Voltage - V
R
D
10
10
15
Pulsed
0
5
I
D
=4
A
70
60
0
80
50
40
30
20
90
I
D
=8
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
1
10
100
20
0.1
40
60
80
100
V
GS
=10V
V
GS
=4.5V
V
GS
=4.0V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=10 V
I
D
=1 mA
50
0
150
50
100
1.0
2.0
3.0
#
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PDF描述 |
|---|---|
| UPA1763 | SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1763G | SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1774 | SWITCHING DUAL P-CHANNEL POWER MOSFET |
| UPA1774G | SWITCHING DUAL P-CHANNEL POWER MOSFET |
| UPA1790 | SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1760GE2 | 制造商:NEC 功能描述:New |
| UPA1763 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1763G | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1763G-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1763G-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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