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參數(shù)資料
| 型號(hào)： | UPA1790 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 中文描述： | 開關(guān)N溝道和P溝道功率場效應(yīng)晶體管工業(yè)用 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 53K |
| 代理商： | UPA1790 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1790
SWITCHING
N-AND P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G14320EJ1V0DS00 (1st edition)
May 1999 NS CP(K)
DESCRIPTION
This product is N-and P-Channel MOS Field Effect Transistor
designed for motor driver applications.
FEATURES
Dual chip type
Low on-resistance
N-Channel R
DS(on)1
= 0.12
TYP. (V
GS
= 10 V, I
D
= 0.5 A)
R
DS(on)2
= 0.19
TYP. (V
GS
= 4 V, I
D
= 0.5 A)
P-Channel R
DS(on)1
= 0.45
TYP. (V
GS
= –10 V, I
D
= –0.35 A)
R
DS(on)2
= 0.74
TYP. (V
GS
= –4 V, I
D
= –0.35 A)
Low input capacitance
N-Channel C
iss
= 180 pF TYP.
P-Channel C
iss
= 230 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1790G
Power SOP8
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
N-Channel
1
2
7,8 ; Drain 1
; Source 1
; Gate 1
P-Channel
3
4
5,6 ; Drain 2
; Source 2
; Gate 2
EQUIVARENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
P-Channel
N-Channel
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