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參數(shù)資料
| 型號(hào)： | UPA1760 |
| 廠商： | NEC Corp. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 68K |
| 代理商： | UPA1760 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998,1999
MOS FIELD EFFECT TRANSISTOR
μ
PA1760
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
G13891EJ1V0DS00 (1st edition)
November 1999 NS CP(K)
PACKAGE DRAWING (Unit : mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 Max.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 Max.
0.10
1
4
8
5
1
2
7, 8
; Source1
; Gate1
; Drain1
3
4
5, 6
; Source2
; Gate2
; Drain2
EQUIVALENT CIRCUIT
(1/2 Circuit)
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
The
μ
PA1760 is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
application of notebook computers.
FEATURES
Dual Chip Type
Low On-Resistance
R
DS(on)1
= 26.0 m
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
R
DS(on)2
= 36.0 m
MAX. (V
GS
= 4.5 V, I
D
= 4.0 A)
R
DS(on)3
= 42.0 m
MAX. (V
GS
= 4.0 V, I
D
= 4.0 A)
Low C
iss
: C
iss
= 760 pF TYP.
Built-in G-S Protection Diode
Small and Surface Mount Package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note1
Total Power Dissipation (1 unit)
Note2
Total Power Dissipation (2 unit)
Note2
I
D(DC)
±8.0
A
I
D(pulse)
±32
A
P
T
1.7
W
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
–55 to + 150
°C
I
AS
8
A
E
AS
6.4
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
T
A
= 25 °C, Mounted on ceramic substrate of 2000 mm
2
x 1.6 mm
3.
Starting T
ch
= 25 °C, R
G
= 25
, V
GS
= 20 V
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The mark
#
shows major revised points.
#
#
#
#
#
#
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1763 | SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1763G | SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1774 | SWITCHING DUAL P-CHANNEL POWER MOSFET |
| UPA1774G | SWITCHING DUAL P-CHANNEL POWER MOSFET |
| UPA1790 | SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1760GE2 | 制造商:NEC 功能描述:New |
| UPA1763 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1763G | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| UPA1763G-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1763G-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
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