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參數(shù)資料
| 型號： | UMX21N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High transition frequency (dual transistors) |
| 中文描述： | 高轉(zhuǎn)換頻率（雙晶體管） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 68K |
| 代理商： | UMX21N |
UMX21N
Transistors
z
Electrical characteristics curves
10
35mA
Ta
=
25
°
C
C
C
2/2
1
0
2
3
4
5
0
8
6
4
2
5mA
30mA
25mA
20mA
15mA
10mA
I
B
=
0
μ
A
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter output
characteristics ( )
0.1
0
0.2
0.3
0.4
0.5
0
50
40
30
20
10
0.3mA
04mA
05mA
1m
0.2mA
0.1mA
I
B
=
0mA
Ta
=
25
°
C
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2
Grounded emitter output
characteristics ( )
0.4
0
0.8
1.2
1.6
2.0
0
50
40
30
20
10
1
°
C
2
°
C
2
°
C
V
CE
=
5V
C
C
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3
Grounded emitter propagation
characteristics
50
0.1
20
0.2
10
0.5
5
1
2
20
10
5
50
100
200
500
1000
C
C
(
COLLECTOR CURRENT : I
C
(mA)
Fig.5
Collector-emitter saturation
voltage vs. collector current
20
Ta
=
25
°
C
I
C
/I
B
=
10
50
0.1
20
0.2
10
0.5
5
1
2
50
20
100
200
500
1000
2000
G
T
(
COLLECTOR CURRENT : I
C
(mA)
Fig.6
Gain bandwidth product vs.
collector current
Ta
=
25
°
C
V
CE
=
5V
50
0.1
20
0.2
10
0.5
5
1
2
20
10
50
100
200
500
1000
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.4
DC current gain vs. collector current
Ta
=
25
°
C
V
CE
=
5V
50
0.1
20
0.2
10
0.5
5
1
2
0.5
0.2
1
2
5
10
20
F
r
(
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7
Collector output capacitance
vs. voltage
Ta
=
25
°
C
f
=
1MHz
50
0.1
20
0.2
10
0.5
5
1
2
1
2
5
10
20
50
O
o
(
)
BASS CURRENT : I
B
(mA)
Fig.9
Output-on resistance vs.
base current
Ta
=
25
°
C
f
=
500kHz
υ
i
=
100mVrms
R
L
=
1k
50
0.1
20
0.2
10
0.5
5
1
2
0.5
0.2
1
2
5
10
O
o
(
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.8 Back capacitance voltage
Ta
=
25
°
C
f
=
1MHz
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