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參數(shù)資料
| 型號(hào)： | UMX21N |
| 廠(chǎng)商： | Rohm CO.,LTD. |
| 英文描述： | High transition frequency (dual transistors) |
| 中文描述： | 高轉(zhuǎn)換頻率（雙晶體管） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 68K |
| 代理商： | UMX21N |
UMX21N
Transistors
High transition frequency (dual transistors)
1/2
UMX21N
z
Features
1) Two 2SC4713K chips in a UMT package.
2) Very low output-on resistance. (Ron)
3) Low capacitance.
z
Equivalent circuits
UMX21N
(3)
(2)
(1)
(4)
(5)
(6)
Tr
1
Tr
2
z
External dimensions
(Unit : mm)
UMX21N
Each lead has same dimensions
ROHM : UMT6
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
z
Absolute maximum ratings
(Ta=25
°
C)
120mW per element must not be exceeded.
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
12
6
3
50
150
150
55 to
+
150
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
z
Package, marking, and packaging specifications
Type
Package
Marking
Code
UMX21N
UMT6
X21
TR
3000
Basic ordering unit (pieces)
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Ron
Min.
12
6
3
270
300
Typ.
800
1
2
Max.
0.5
0.5
0.3
560
1.7
Unit
V
V
V
μ
A
μ
A
V
MHz
pF
Conditions
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
10V
V
EB
=
2V
I
C
/I
B
=
10mA/1mA
V
CE
/I
C
=
5V/10mA
V
CE
=
5V, I
E
=
10mA, f
=
200MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
I
B
=
3mA, V
I
=
100mVrms, f
=
500kHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
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