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參數(shù)資料
| 型號： | UMX5N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High transition frequency (dual transistors) |
| 中文描述： | 高轉(zhuǎn)換頻率（雙晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 67K |
| 代理商： | UMX5N |
EMX5 / UMX5N / IMX5
Transistors
High transition frequency (dual transistors)
EMX5 / UMX5N / IMX5
!
Features
1) Two 2SC3838K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=3.2GHz)
3) Low output capacitance. (Cob=0.9pF)
!
Equivalent circuits
EMX5 / UMX5N
(3)
(2)
(1)
(4)
(5)
(6)
IMX5
(4)
(5)
(6)
(3)
(2)
(1)
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
20
11
3
50
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMX5 / UMX5N
IMX5
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
EMX5
EMT5
X5
T2R
8000
IMX5
SMT6
X5
T108
3000
UMX5N
UMT6
X5
TR
3000
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
UMX5N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
IMX5
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
(
(
(
0.3Min.
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
Each lead has same dimensions
ROHM : EMT6
EMX6
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min.
20
11
3
27
0.5
1.4
Typ.
1
3.2
0.9
Max.
0.5
0.5
270
0.5
2
Unit
V
V
V
μ
A
μ
A
V
Conditions
Transition frequency
Output capacitance
V
CE(sat)
h
FE1 /
h
FE2
f
T
Cob
1.55
GHz
pF
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
10V
V
EB
=
2V
V
CE
/I
C
=
10V/5mA
V
CE
/I
C
=
10V/5mA
V
CE
/I
C
=
10V/10mA, f
=
200MHz
V
CB
/f
=
10V/1MHz, I
E
=
0A
I
C
/I
B
=
10mA/5mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
h
FE
pairing
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