參數(shù)資料
型號： UMX4N
廠商： Rohm CO.,LTD.
英文描述： High transition frequency (dual transistors)
中文描述： 高轉(zhuǎn)換頻率（雙晶體管）
文件頁數(shù)： 1/2頁
文件大?。?/td> 66K
代理商： UMX4N
EMX4 / UMW6N / UMW10N / UMX4N /
Transistors
FMW6 / FMW10 / IMX4
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
!
Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (f
T
=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!
Equivalent circuit
UMW6N
(3)
(2)
(1)
(4)
(5)
FMW6
(3)
(4)
(5)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
UMW10
(3)
(4)
(5)
(2)
(1)
FMW10
EMX4 / UMX4N
(3)
(2)
(1)
(4)
(5)
(6)
IMX4
(4)
(5)
(6)
(3)
(2)
(1)
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
18
3
50
300(TOTAL)
150
55
~
+
150
150(TOTAL)
EMX4 / UMW6N / UMW10N / UMX4N
FMW6 / FMW10 / IMX4
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
1
2
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min.
30
18
3
27
0.5
600
Typ.
1
1500
0.95
Max.
0.5
0.5
270
0.5
2
Unit
V
V
V
μ
A
μ
A
V
Conditions
Transition frequency
Output capacitance
V
CE(sat)
h
FE1 /
h
FE2
f
T
Cob
1.6
MHz
pF
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
10V
V
EB
=
2V
V
CE
/I
C
=
10V/10mA
V
CE
/I
C
=
10V/10mA
V
CE
/I
C
=
10V/10mA, f
=
200MHz
V
CB
/f
=
10V/1MHz, I
E
=
0A
I
C
/I
B
=
20mA/4mA
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
h
FE
pairing
相關(guān)PDF資料
PDF描述
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