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參數(shù)資料
| 型號(hào)： | UMX1N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | ER 2C 2#16S SKT RECP |
| 中文描述： | 通用晶體管（雙晶體管） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | UMX1N |
EMX1 / UMX1N / IMX1
Transistors
3/3
0.2
20
10
0.5
1
2
5
10
20
50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25
C
D
F
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
0.2
0.5
COLLECTOR CURRENT : I
C
(mA)
1
2
5
10
20
50 100 200
20
10
50
100
200
500
25
C
55
C
Ta=100
C
V
CE
=
5V
D
F
Fig.5 DC current gain vs. collector
current ( II )
0.2
0.5
1
2
5
10
20
50 100 200
0.01
0.02
0.05
0.1
0.2
0.5
I
C
/I
B
=50
20
10
Ta=25
C
C
C
V
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.2
C
C
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=50
20
10
Ta=25
C
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
0.2
C
C
COLLECTOR CURRENT : I
C
(mA)
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100 200
I
C
/I
B
=10
Ta=100
C
25
C
55
C
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
C
C
COLLECTOR CURRENT : I
C
(mA)
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5
1
2
5
10
20
50 100
I
C
/I
B
=50
Ta=100
C
25
C
55
C
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
50
0.5
1
2
5
10
20
50
100
100
200
500
Ta=25
C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
T
T
Fig.10 Gain bandwidth product vs.
emitter current
0.2
0.5
1
2
5
10
20
50
1
2
5
10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
C
E
(
Ta=25
C
f
=
1MHz
I
E
=0A
I
C
=0A
0.2
0.5
1
2
5
10
10
20
50
100
200
EMITTER CURRENT : I
E
(mA)
Fig.12 Base-collector time constant vs.
emitter current
b
Ta=25
C
f=32MH
Z
V
CB
=6V
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