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參數(shù)資料
| 型號： | UMX1N |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | ER 2C 2#16S SKT RECP |
| 中文描述： | 通用晶體管（雙晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 91K |
| 代理商： | UMX1N |
EMX1 / UMX1N / IMX1
Transistors
2/3
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
60
50
7
120
2
0.1
0.1
560
0.4
3.5
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
60V
V
EB
=7
V
V
CE
=
6V, I
C
=
1mA
I
C
/I
B
=
50mA/5mA
V
V
μ
A
μ
A
V
PF
Typ. Max. Unit
Conditions
f
T
180
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
!
Packaging specifications
Package
Code
TN
T110
3000
3000
Taping
Basic ordering
unit (pieces)
UMX1N
T2R
8000
EMX1
IMX1
Type
!
Electrical characteristic curves
0
0.1
0.2
0.5
2
20
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
5
10
V
CE
=
6V
C
C
m
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
2
C
5
C
T
C
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
0
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.20mA
Ta=25
C
I
B
=0A
0.40mA
0.50mA
0.45mA
Fig.2 Grounded emitter output
characteristics ( I )
0
0
2
8
10
4
8
12
16
4
6
20
I
B
=0A
Ta=25
C
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
3
μ
A
6
μ
A
9
μ
A
12
μ
A
15
μ
A
18
μ
A
21
μ
A
24
μ
A
27
μ
A
30
μ
A
Fig.3 Grounded emitter output
characteristics ( II )
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