參數(shù)資料
型號(hào): UAA3522HL
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: Low power dual-band GSM transceiver with an image rejecting front-end
中文描述: TELECOM, CELLULAR, RF FRONT END CIRCUIT, PQFP48
封裝: 7 X 7 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT-313-2, LQFP-48
文件頁數(shù): 16/28頁
文件大?。?/td> 148K
代理商: UAA3522HL
2000 Feb 18
16
Philips Semiconductors
Objective specification
Low power dual-band GSM transceiver
with an image rejecting front-end
UAA3522HL
R
i(pin)
C
i(pin)
input resistance per pin
input capacitance per
pin
input power
note 13
100
1
pF
P
i
symmetrical
single-ended
note 1
14.5
10
11.5
7
5.5
2.5
10
40
dBm
dBm
dB
dBm
S
11
LO
L
input power matching
reverse isolation local
oscillator leakage
15
O
FFSET MIXER
; DCS
BAND
(
PINS
TXIRFA
AND
TXIRFB)
f
i(RF)(TX)
TX RF VCO input
frequency
input resistance per pin
input capacitance per
pin
input power
1710
1785
MHz
R
i(pin)
C
i(pin)
note 13
100
1
pF
P
i
symmetrical
single-ended
note 1
14.5
10
11.5
7
5.5
2.5
10
40
dBm
dBm
dB
dBm
S
11
LO
L
input power matching
reverse isolation local
oscillator leakage
15
P
HASE DETECTOR
; DCS
AND
GSM
BAND
(
PIN
PHDOUT)
I
cp(max)
charge pump maximum
sink or source current
phase detector gain
phase detector gain
variation
output voltage
output resistance
output noise current
density
VCO sweeping source
current
output resistance to
ground when powered
down
level of spurious signal
at four times the
wanted f
mod
signal
level of spurious signal
at eight times the
wanted f
mod
signal
local oscillator
feedthrough level
image level
R = 270
, 1%; V
O
=
1
2
V
CCPHD
2.2
2.4
2.6
mA
G
PHD
G
PHD
20
2
+20
mA/rad
%
V
O
=
1
2
V
CCPHD
; note 11
V
O
R
o
N
o
0.5
10
V
CCPHD
0.5 V
200
V
O
=
1
2
V
CCPHD
20 kHz < f
offset
< 20 MHz in lock;
note 1
V
O
=
1
2
V
CCPHD
k
pA/
Hz
I
sweep
0.4
0.55
0.7
mA
R
o(off)
TX mode disabled
1
k
SPUR
4fm
f
mod
= 67.7 kHz;
f
o(RF)(GSM)
= 880 MHz
to 915 MHz; f
o(RF)(DCS)
= 1710 MHz
to 1785 MHz
48
dBc
SPUR
8fm
55
dBc
LO
out
at f
RF
40
32
dBc
IM
o
at f
RF
; note 1
38
35
dBc
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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