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參數(shù)資料
| 型號(hào)： | UAA3522HL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Low power dual-band GSM transceiver with an image rejecting front-end |
| 中文描述： | TELECOM, CELLULAR, RF FRONT END CIRCUIT, PQFP48 |
| 封裝： | 7 X 7 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT-313-2, LQFP-48 |
| 文件頁數(shù)： | 13/28頁 |
| 文件大小： | 148K |
| 代理商： | UAA3522HL |
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2000 Feb 18
13
Philips Semiconductors
Objective specification
Low power dual-band GSM transceiver
with an image rejecting front-end
UAA3522HL
Notes:
1.
V
CCCPRF
, V
CCCPIF
and V
CCPHD
must be equal to, or greater than, the other supply voltages. The other supply
voltages must be equal.
‘HIGH-level’ means the control pin voltage must be equal to the supply voltage V
CC
. ‘LOW-level’ means the control
pin voltage must be equal to the supply ground.
I
CC(RX)
= I
CC(RFIF)(RX)
+ I
CCIF(RX)
+ I
CCRF(RX);
I
CC(TX)
= I
CCIF(TX)
+ [I
CCRFLO(TX)
I
CCRFLO(RX)
] + I
CCPHD(TX)
+ I
CCRF(TX)
;
I
CC(SYN)
= I
CCIFLO(SYN)
+ I
CCCPIF(SYN)
+ I
CCPLL(SYN)
+ I
CCCPRF(SYN)
+ I
CCRFLO(SYN)
.
2.
3.
AC CHARACTERISTICS
All parameters are guaranteed at V
CC
= 2.8 V; T
amb
= 25
°
C; unless specified otherwise.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
RF receiver section; measured in a 50
impedance system, including external input/output baluns and
matching networks to 50
(see Fig.3)
RF
RECEIVER INPUTS
(
PINS
RXIRFA
AND
RXIRFB)
f
i(RF)(GSM)
GSM band RF input
frequency
differential input
resistance
differential input
capacitance
input power matching
level of spurious input
power due to
LO leakage
925
960
MHz
R
i(dif)
146
C
i(dif)
0.85
pF
S
11
P
i(spur)
note 1
15
50
10
40
dB
dBm
R
ECEIVER
IF
OUTPUT
(
PINS
RXOIFA
AND
RXOIFB)
f
o(IF)
R
L(m)
IF output frequency
matched load
resistance
power conversion gain
LO > RF
differential; note 2
200
1
MHz
k
G
conv(p)
into specified matched load
resistance; note 1
over specified frequency range;
note 3
note 6
23
24.5
27
dB
G
ripple
gain ripple
0.5
+0.5
dB
G/
T
gain variation
with temperature
noise figure
1 dB input
compression point
referenced to input
60
30
3.45
3.85
dBm/K
dB
F
CP1
for R
i(dif)
; notes 1, 3 and 4
note 1
at T
amb
= 25
°
C
over temperature range
note 1
23.5
24.2
18
dBm
dBm
dBm
IP
3
third-order intercept
point referenced to
input
3 dB desensitization
point referenced to
input
DES
3dB
f
i(RF)
= 3 MHz RF input power =
101 dBm; note 1
25
dBm
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