參數(shù)資料
型號: U309
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel JFET(最小柵源擊穿電壓-25V,最小飽和漏極電流12mA的N溝道結型場效應管)
中文描述: N溝道場效應(最小柵源擊穿電壓- 25V的,最小飽和漏極電流12mA電流的N溝道結型場效應管)
文件頁數(shù): 6/7頁
文件大?。?/td> 98K
代理商: U309
J/SST/U308 Series
6
Siliconix
S-52424—Rev. F, 14-Apr-97
Typical Characteristics (Cont’d)
1
10
100
100
80
40
20
0
60
V
GS(off)
= –1.5 V
V
GS(off)
= –3 V
On-Resistance vs. Drain Current
I
D
– Drain Current (mA)
1
10
0.1
100
80
40
20
0
60
I
D
– Drain Current (mA)
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
GS(off)
= –1.5 V
V
GS(off)
= –3 V
A
V
Circuit Voltage Gain vs. Drain Current
15
0
–12
–16
–20
–4
12
6
3
0
9
–8
Common-Source Input Capacitance
vs. Gate-Source Voltage
V
DS
= 0 V
f = 1 MHz
V
DS
= 5 V
V
GS
– Gate-Source Voltage (V)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
0
–12
–20
–16
–4
8
4
2
0
6
–8
V
DS
= 0 V
f = 1 MHz
V
DS
= 5 V
V
GS
– Gate-Source Voltage (V)
C
r
100
10
1
0.1
100
1000
(
T
A
= 25 C
V
DG
= 10 V
I
D
= 10 mA
Common–Gate
g
ig
b
ig
Input Admittance vs. Frequency
f – Frequency (MHz)
100
10
1
0.1
100
1000
(
T
A
= 25 C
V
DG
= 10 V
I
D
= 10 mA
Common–Gate
–g
fg
b
fg
Forward Admittance vs. Frequency
f – Frequency (MHz)
C
i
200
500
200
500
A
V
g
fs
R
L
R
L
g
os
1
r
D
)
相關PDF資料
PDF描述
U404 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結型場效應管)
U401 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結型場效應管)
U406 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結型場效應管)
U421 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V,柵極工作電流-0.25pA的單片雙N溝道結型場效應管)
U423 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V,柵極工作電流-0.25pA的單片雙N溝道結型場效應管)
相關代理商/技術參數(shù)
參數(shù)描述
U309_TO-18 制造商:MICROSS 制造商全稱:MICROSS 功能描述:N-CHANNEL JFET
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U309CHP 制造商:Vishay Siliconix 功能描述:NZB2 CHIPS
U309-E3 功能描述:JFET 450MHz Amp RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel
U30BCT 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Ultrafast Plastic Rectifier