- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄383968 > U309 (Vishay Intertechnology,Inc.) N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流12mA的N溝道結(jié)型場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | U309 |
| 廠(chǎng)商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流12mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 25V的，最小飽和漏極電流12mA電流的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | U309 |
J/SST/U308 Series
Siliconix
S-52424—Rev. F, 14-Apr-97
3
Specifications
a
for U309 and U310
Limits
U309
U310
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1 A , V
DS
= 0 V
–35
–25
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
–1
–4
–2.5
–6
Saturation Drain Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
12
30
24
60
mA
Gate Reverse Current
I
GSS
V
GS
= –15 V, V
DS
= 0 V
–0.002
–0.15
–0.15
nA
T
A
= 125 C
–0.001
–0.15
–0.15
A
Gate Operating Current
I
G
V
DG
= 9 V, I
D
= 10 mA
–15
pA
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
35
Gate-Source Forward Voltage
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.7
1
1
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
14
10
10
mS
Common-Source
Output Conductance
g
os
110
250
250
S
Common-Source
Input Capacitance
C
iss
V
DS
= 10 V, V
= –10 V
f = 1 MHz
4
5
5
pF
Common-Source
Reverse Transfer Capacitance
C
rss
GS
1.9
2.5
2.5
Equivalent Input Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
6
nV
√
Hz
High Frequency
Common-Gate
Forward Transconductance
g
fg
f = 105 MHz
14
f = 450 MHz
13
mS
Common-Gate
Output Conductance
g
og
f = 105 MHz
0.16
V
DS
= 10 V
I
D
= 10 mA
f = 450 MHz
0.55
Common Gate Power Gain
Common-Gate Power Gain
d
G
pg
f = 105 MHz
16
14
14
f = 450 MHz
11.5
10
10
dB
Noise Figure
NF
f = 105 MHz
1.5
2
2
f = 450 MHz
2.7
3.5
3.5
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
Gain (G
pg
) measured at optimum input noise match.
NZB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| U404 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| U401 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| U406 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| U421 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V，柵極工作電流-0.25pA的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
| U423 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-40V，柵極工作電流-0.25pA的單片雙N溝道結(jié)型場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| U309_TO-18 | 制造商:MICROSS 制造商全稱(chēng):MICROSS 功能描述:N-CHANNEL JFET |
| U309-2 | 制造商:Vishay Angstrohm 功能描述:Trans JFET N-CH 3-Pin TO-52 |
| U309CHP | 制造商:Vishay Siliconix 功能描述:NZB2 CHIPS |
| U309-E3 | 功能描述:JFET 450MHz Amp RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| U30BCT | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual Common-Cathode Ultrafast Plastic Rectifier |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。