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參數(shù)資料
| 型號： | TRCV0110G |
| 廠商： | Lineage Power |
| 英文描述： | 10 Gbits/s Clock Recovery, 1:16 Data Multiplexer(10 G位/秒時(shí)鐘恢復(fù)，1:16數(shù)據(jù)多路復(fù)用器) |
| 中文描述： | 10 Gb /秒時(shí)鐘恢復(fù)，1:16數(shù)據(jù)復(fù)用器（10政位/秒時(shí)鐘恢復(fù)，1:16數(shù)據(jù)多路復(fù)用器） |
| 文件頁數(shù)： | 17/24頁 |
| 文件大?。?/td> | 524K |
| 代理商： | TRCV0110G |
Advance Data Sheet
August 2000
TRCV0110G
10 Gbits/s Clock Recovery, 1:16 Data Demultiplexer
17
Lucent Technologies Inc.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum
ratings for extended periods can adversely affect device reliability.
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid
exposure to electrostatic discharge (ESD) during handling and mounting. Lucent employs a human-body model
(HBM) and charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used in the defined model. No industrywide standard
has been adopted for the CDM. However, a standard HBM (resistance = 1500
, capacitance = 100 pF) is widely
used and, therefore, can be used for comparison purposes:
Operating Conditions
Table 10. Recommended Operating Conditions
Parameter
Min
—
–40
Max
—
125
Unit
V
°C
V
Power Supply Voltage (V
CC
)
Storage Temperature
Pin Voltage
GND – 0.5
V
CC
+ 0.5
Device
TRCV0110G
Voltage
TBD
Parameter
Symbol
—
—
Min
3.135
—
Typ
3.3
—
Max
3.465
—
Unit
V
V
Power Supply (dc voltage)
Ground
Input Voltage:
Low
High
Temperature:
Ambient
Power Dissipation
V
IL
V
IH
(See Table 12,
Table 13,
Table 15.)
(See Table 12,
Table 13,
Table 15.)
(See Table 12,
Table 13,
Table 15.)
V
V
—
P
D
–40
—
—
1.8
85
TBD
°C
W
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