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參數(shù)資料
| 型號： | TP3410 |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 通信及網(wǎng)絡(luò) |
| 英文描述： | TP3410 ISDN Basic Access Echo-Cancelling 2B1Q U Transceiver |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PDIP24 |
| 文件頁數(shù)： | 26/32頁 |
| 文件大?。?/td> | 436K |
| 代理商： | TP3410 |
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Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
Office/Distributors for availability and specifications.
V
CC
to GND
Voltage at Li, Lo
7V
V
CC
a
1V to GND
b
1V
V
CC
a
1V to GND
b
1V
Voltage at Any Digital Input
Storage Temperature Range
b
65
§
C to
a
150
§
C
g
200
m
A
Current at Lo
Current at Any Digital Output
g
50 mA
300
§
C
TBD
40
§
C/W
Lead Temperature (Soldering, 10 seconds)
ESD (Human Body Model) J
i
JA
(Package Number J28A)
Electrical Characteristics
Unless otherwise noted, limits printed in
bold
characters are electrical testing limits at V
CC
e
5.0V and T
A
e
25
§
C. All other
limits are design goals for V
CC
e
5.0V
g
5% and T
J
e
0
§
C to 90
§
C (refer to Application Note AN-336). This data sheet is still
preliminary and parameter limits are not indicative of characterization data with respect to power supply or temperature varia-
tions. Please contact your National Semiconductor Sales Office for the most current product information.
Symbol
Parameter
Conditions
Limits
Units
Min
Typ
Max
DIGITAL INTERFACES
V
IL
Input Low Voltage
All Digital Inputs
0.7
V
V
IH
Input High Voltage
All Digital Inputs
2.2
V
VILX
Input Low Voltage
MCLK/XTAL Input
0.5
V
VIHX
Input High Voltage
MCLK/XTAL Input
V
CC
b
0.5
V
V
OL
Output Low Voltage
Br, I
O
e
3.2 mA
All Other Digital Outputs, I
O
e
1 mA
0.4
V
V
OH
Output High Voltage
Br, I
O
e
3.2 mA
All Other Digital Outputs, I
O
e b
1 mA
All Outputs, I
O
e b
100
m
A
2.4
2.4
V
V
V
V
CC
b
0.5
I
I
Input Current
Any Digital Input, GND
k
V
IN
k
V
CC
b
10
10
m
A
I
OZ
Output Current in High
Impedance State (TRI-STATE
é
)
Br, INT, LSD, CO, Dr
GND
k
V
OUT
k
V
CC
b
10
10
m
A
LINE INTERFACES
RLi
Differential Input Resistance
GND
k
Li
a
, Li
b
k
V
CC
30
k
X
CLLo
Load Capacitance
Between Lo
a
and Lo
b
Connected Externally
200
pF
V
OS
Differential Output Offset
Voltage at Lo
a
, Lo
b
b
100
a
100
mV
POWER DISSIPATION
I
CC
0
Power Down Current
All Outputs Open-Circuit
4
mA
I
CC
1
Power Up Current
Device Activated
65
mA
TRANSMISSION PERFORMANCE
Transmit Pulse Amplitude
R
L
e
115
X
between Lo
a
and Lo
b
(Note 2)
g
3.5
Vpk
Transmit Pulse Linearity
36
60
dB
Input Pulse Amplitude
Differential between Li
a
and Li
b
g
4
g
800
mVpk
Note 1:
GND refers to GNDA, GNDD1 and GNDD2 commoned together; V
CC
refers to V
CC
A and V
CC
D commoned together.
Note 2:
In the circuits shown inFigures 9 and10, terminated in 135
X
, this is equivalent to
g
2.5V for isolated pulses of the outer levels. Selection of this test mode
is described in the TP3410 Users Manual AN-913.
26
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| TP3410C WAF | 制造商:Texas Instruments 功能描述: |
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