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參數(shù)資料
| 型號(hào)： | TMS426400P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| 中文描述： | 4194304 - Word的4位高速DRAM等 |
| 文件頁數(shù)： | 8/30頁 |
| 文件大?。?/td> | 441K |
| 代理商： | TMS426400P |
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TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
TMS416400/P
PARAMETER
TEST CONDITIONS
’416400-60
’416400P-60
’416400-70
’416400P-70
’416400-80
’416400P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current
(leakage)
VCC = 5.5 V,
All others = 0 V to VCC
VCC = 5.5 V,
CAS high
VI = 0 V to 6.5 V,
±
10
±
10
±
10
μ
A
IO
Output current
(leakage)
VO = 0 V to VCC,
±
10
±
10
±
10
μ
A
ICC1§
Read- or write-cycle
current
VCC = 5.5 V,
Minimum cycle
80
70
60
mA
ICC2
Standby current
VIH = 2.4 V (TTL),
After 1 memory cycle,
RAS and CAS high
2
2
2
mA
VIH = VCC – 0.2 V (CMOS),
After 1 memory cycle,
RAS and CAS high
’416400
1
1
1
mA
’416400P
500
500
500
μ
A
ICC3§
Average refresh
current (RAS-only
refresh or CBR)
VCC = 5.5 V,
RAS cycling,
CAS high (RAS only),
RAS low after CAS low (CBR)
Minimum cycle,
80
70
60
mA
ICC4
Average page current
VCC = 5.5 V,
RAS low,
tPC = MIN,
CAS cycling
70
60
50
mA
ICC6#
Self-refresh current
CAS < 0.2 V,
Measured after tRASS min
RAS < 0.2 V,
500
500
500
μ
A
ICC10#
Battery back-up
operating current
(equivalent refresh
time is 128 ms); CBR
only
tRC = 31.25
μ
s,
VCC – 0.2 V
≤
VIH
≤
6.5 V,
0 V
≤
VIL
≤
0.2 V,
Address and data stable
tRAS
≤
1
μ
s,
W and OE = VIH,
500
500
500
μ
A
For conditions shown as MIN/MAX, use the appropriate value specified in the timing requirements.
Measured with outputs open
§Measured with a maximum of one address change while RAS = VIL
Measured with a maximum of one address change while CAS = VIH
#For TMS416400P only
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS427400 | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409ADJ-60 | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS426409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427400 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409ADGA-60 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
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