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| 型號(hào)： | TMS426400P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| 中文描述： | 4194304 - Word的4位高速DRAM等 |
| 文件頁(yè)數(shù)： | 21/30頁(yè) |
| 文件大?。?/td> | 441K |
| 代理商： | TMS426400P |
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TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
21
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
CAS
Address
W
OE
DQ1–DQ4
Row
Column
Don’t Care
Don’t Care
Valid
In
tRP
Valid Data In
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Column
tRASP
tCSH
tPC
tCRP
tRSH
tCAS
tRCD
tASC
tRAH
tCAH
tCP
tASR
tRAD
tCWL
tWP
tCWL
tRWL
tDH
tDH
tDS
(see Note A)
tOEH
tOEH
tOED
tRAL
tCAL
tRHCP
tDS
(see Note A)
NOTES: A. Referenced to CAS or W, whichever occurs last
B. A read cycle or a read-write cycle can be intermixed with write cycles as long as read and read-write timing specifications are not
violated.
Figure 8. Enhanced-Page-Mode Write-Cycle Timing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS427400 | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409ADJ-60 | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS426409A | 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427400 | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427409A | 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409ADGA-60 | 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
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