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參數(shù)資料
| 型號： | TMS426400P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| 中文描述： | 4194304 - Word的4位高速DRAM等 |
| 文件頁數(shù)： | 22/30頁 |
| 文件大小： | 441K |
| 代理商： | TMS426400P |
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TMS416400, TMS416400P, TMS417400, TMS417400P
TMS426400, TMS426400P, TMS427400, TMS427400P
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS
SMKS881B – MAY 1995 – REVISED AUGUST 1995
22
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
Valid Out
tOEZ
RAS
CAS
Address
W
OE
DQ1–DQ4
Row
Column
Don’t Care
Valid
In
Column
tRASP
Valid
In
tRP
tCSH
tPRWC
tRCD
tCP
tCRP
tRSH
tASC
tCAH
tRAD
tASR
tCWD
tAWD
tRWD
tRAH
tCWL
tRWL
tWP
tCPA
tOEH
tDH
tDS
tAA
tRCS
tRAC
tCAC
tCLZ
tOEA
tOEH
tOED
tCAS
Valid Out
tCPW
tRHCP
tOHO
Output can go from high-impedance state to an invalid-data state prior to the specified access time.
NOTE A: A read or write cycle can be intermixed with read-write cycles as long as the read and write timing specifications are not violated.
Figure 9. Enhanced-Page-Mode Read-Write-Cycle Timing
相關PDF資料 |
PDF描述 |
|---|---|
| TMS427400 | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS416409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409ADJ-60 | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS417409A | 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS426409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427400 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427400P | 制造商:TI 制造商全稱:Texas Instruments 功能描述:4194304-WORD BY 4-BIT HIGH-SPEED DRAMS |
| TMS427409A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS427409ADGA-60 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES |
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