參數(shù)資料
型號(hào): TMC1185
廠商: Fairchild Semiconductor Corporation
英文描述: 10-Bit, 40 Msps Sampling Analog-to-Digital Converter(10位,采樣速率40Msps,A/D轉(zhuǎn)換器)
中文描述: 10位,40 Msps的采樣模擬到數(shù)字轉(zhuǎn)換器(10位,40Msps采樣速率,的A / D轉(zhuǎn)換器)
文件頁(yè)數(shù): 16/20頁(yè)
文件大?。?/td> 191K
代理商: TMC1185
TMC1185
PRODUCT SPECIFICATION
16
1.
Signal-to-Noise-and-Distortion Ratio (SINAD):
2.
Signal-to-Noise Ratio (SNR):
3.
Intermodulation Distortion (IMD):
importance in dynamic signal processing applications.
10
Noise
--------------+
log
10
NoisePower
Sinewave Signal Power
log
10
Sinewave Signal Power
Highest IMD Product Power (to 5th-order)
log
Figure 11. TMC1185 Interface Schematic with AC-Coupling and External Buffers
GND
DNC
DNC
LSB
MSB
GND
11
12
13
14
15
16
17
18
9
8
7
6
5
4
3
2
1
19
VDD
CLK
VDD
OE
MSBI
VDD
REFB
CM
REFT
VDD
GND
IN
IN
GND
15
16
17
18
19
20
21
22
23
24
25
26
27
28
14
13
12
11
10
9
8
7
6
5
4
3
2
1
TMC1185
0.1
μ
F
0.1
μ
F
0.1
μ
F
0.1
μ
F
0.1
μ
F
0.1
μ
F
0.1
μ
F
R
1
50
W
R
2
50
W
Ext
Clk
65-1185-18
AC Input
Signal
11
12
13
14
15
16
17
18
9
8
7
6
5
4
3
2
Dir
G+
1
19
Dir
G+
74FCT2245
74FCT2245
Mini-Circuits
TT1-6-KK81
or equivalent
22pF
22pF
(1)
NOTE:
(1) All capacitors should be located as close to the pins as the manufacturing
process will allow. Ceramic X7R surface-mount capacitors or equivalent are recommended.
+5V
Dynamic Performance Definitions
IMD is referenced to the larger of the test signals f
1
or f
2
.
Five “bins” either side of peak are used for calculation of
fundamental and harmonic power. The “0” frequency bin
(DC) is not included in these calculations as it is of little
Sinewave Signal Power
--------------------------------------------------------
------------------------------------------------------------------------------------------------------
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