參數(shù)資料
型號: TISPPBL3DR
廠商: BOURNS INC
元件分類: 保護電路
英文描述: DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
中文描述: TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
封裝: PLASTIC, MS-012, SO-8
文件頁數(shù): 7/14頁
文件大小: 356K
代理商: TISPPBL3DR
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISPPBL3 Limiting Voltages
TISPPBL3 Programmable Protector
Figure 3 shows the basic test circuit used for the measurement of impulse limiting voltage. During the impulse, the high levels of electrical
energy and rapid rates of change cause electrical noise to be induced or conducted into the measurement system. It is possible for the
electrical noise voltage to be many times the wanted signal voltage. Elaborate wiring and measurement techniques were used to reduce the
noise voltage to less than 2 V peak to peak.
A Keytek ECAT E-Class series 100 with an E505 surge network was used for testing. The E505 produces a 2/10 voltage impulse. This
particular waveform was used as it has the fastest rate of current rise (di/dt) of the rated lightning surge waveforms. This maximizes the
measured limiting voltage. Initially, the 2/10 wavefront current rises at 60 A/
μ
s; this rate then reduces as the peak current is approached.
A large number of devices from different production runs were measured in the test circuit of Figure 3 over the rated temperature range.
Statistical techniques were used to estimate the population 99.997% level (equal to 30 ppm) performance limits.
SLIC Protection Requirements
This clause discusses the voltage withstand capabilities of the various Ericsson Microelectronics SLIC groups and compares these to the
TISPPBL3 protector parameters. The examples provided are intended to provide designers information on how the TISPPBL3 protector and
specific SLICs work together. Designers should always follow the circuit design recommendations contained in the latest edition of an SLIC
data sheet.
Temperature Range
Some SLICs are rated for 0
°
C to 70
°
C operation, others for -40
°
C to 85
°
C operation. The TISPPBL3 protector is specified for -40
°
C to
85
°
C operation and covers both temperature ranges.
Normal Operation
Depending on the SLIC type, the maximum SLIC supply voltage rating (VBat) will be -70 V, -80 V or -85 V. The -160 V rating of the TISPPBL3
gate-cathode (VGKRM) exceeds the highest SLIC voltage rating. To restore normal operation after the TISPPBL3 has switched on, the
minimum switch-off current (holding current IH) needed is equal to the maximum SLIC short circuit current to ground (d.c. line current together
with the maximum longitudinal current).
Maximum TIPX and RINGX Terminal Ratings
The withstand levels of an SLIC line drive amplifier TIPX and RINGX can be expressed in terms of maximum voltage for certain time periods.
The negative voltage rating can be specified in two ways; relative to ground or relative to the SLIC negative supply voltage (VBat).
The TIPX or RINGX voltage withstand levels for the current range of Ericsson SLICs falls into three groups, see Figure 7. The first group,
headed by the PBL 3762A/2 SLIC, has a positive polarity d.c. withstand of +2 V. For 10 ms, the output can withstand a voltage of +5 V. For
1
μ
s, the output can withstand a voltage of +10 V. For 250 ns, the output is able to withstand a voltage of +15 V.
In the negative polarity, the output can withstand VBat continuously. For 10 ms, the output can withstand a voltage of VBat - 20 V. For 1
μ
s, the
output can withstand a voltage of VBat - 40 V. For 250 ns, the output is able to withstand a voltage of VBat -70 V.
The second group, headed by the PBL 3766 SLIC, has a positive polarity d.c. withstand of +0.5 V For 10 ms, 1
μ
s and 250 ns the withstand
voltage is the same as the PBL 3762A/2 group. In the negative polarity, the withstand voltage of the PBL 3766 group is the same as the
PBL 3762A/2 group.
APPLICATIONS INFORMATION
相關PDF資料
PDF描述
TISPPBL3DR-S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
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相關代理商/技術參數(shù)
參數(shù)描述
TISPPBL3DR-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3D-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3SE 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3SE-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube