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參數(shù)資料
| 型號： | TISPPBL3DR |
| 廠商： | BOURNS INC |
| 元件分類： | 保護(hù)電路 |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, MS-012, SO-8 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 356K |
| 代理商： | TISPPBL3DR |
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
The table below lists the combined SLIC and protection recommendations from earlier releases of the Ericsson Microelectronics AB SLICs.
The TISPPBL3 is a functional replacement for the TISPPBL1 and the TISPPBL2.
Earlier Protection and SLIC Recommendations
TISPPBL3 Programmable Protector
SLIC
TISPPBL1
< 55 mA
< 55 mA
< 55 mA
< 55 mA
< 55 mA
TISPPBL2
PBL 3796
PBL 3796/2
PBL 3798
PBL 3798/2
PBL 3798/5
PBL 3798/6
PBL 3799
PBL 3799/2
PBL 386 20/1
PBL 386 21/1
PBL 386 30/1
PBL 386 40/1
PBL 386 50/1
Product Change Notification 109 21-PBL 386 xx/1-1 Uen of 06-06-1999 improved
the silicon design of the PBL 386 20/1, PBL 386 21/1, PBL 386 30/1, PBL 386 40/1
and PBL 386 50/1. These improved devices are designated by a /2 as PBL 386 20/2,
PBL 386 21/2, PBL 386 30/2, PBL 386 40/2 and PBL 386 50/2 respectively.
Use TISPPBL2 when programmed line current is above 55 mA.
APPLICATIONS INFORMATION
Figure 10. Typical Application Circuit
TEST
RELAY
RING
RELAY
SLIC
RELAY
TEST
EQUIP-
MENT
RING
GENERATOR
S1a
S1b
RSA
RSB
R
WIRE
T
WIRE
Th1
Th2
Th3
SLIC
SLIC
PROTECTION
RING/TEST
PROTECTION
SERIES
RESISTANCE
S2a
S2b
TISP
PBL3
TISP
3xxxF3
OR
7xxxF3
S3a
S3b
AI6XAPEB
C1
V
B
C2
D1
V
Bat
Th4
Th5
(INCLUDES
OVER
CURRENT
PROTECTION)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISPPBL3DR-S | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3D-S | 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3SE | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISPPBL3SE-S | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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