參數(shù)資料
型號: TISPPBL3DR
廠商: BOURNS INC
元件分類: 保護電路
英文描述: DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
中文描述: TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
封裝: PLASTIC, MS-012, SO-8
文件頁數(shù): 10/14頁
文件大?。?/td> 356K
代理商: TISPPBL3DR
OCTOBER 2000 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
APPLICATIONS INFORMATION
Figure 10 shows a typical TISPPBL3 SLIC card protection circuit. The incoming line conductors, R and T, connect to the relay matrix via the
series overcurrent protection (RSA and RSB). Fusible resistors, fuses and positive temperature coefficient (PTC) thermistors can be used for
overcurrent protection. Normally, the SLIC reference designs recommend using 40
matched fusible resistors, such as the Bourns 2x40
,
2 % tolerance, 0.5 % matched 4B04B-523-400 or the 4B04B-524-400 with a thermal fuse. These resistors will reduce the prospective current
from the surge generator for both the TISPPBL3 and the ring/test protector. The TISP7xxxF3 protector has the same protection voltage for any
terminal pair. This protector is used when the ring generator configuration may be ground or battery-backed. For dedicated ground-backed
ringing generators, the TISP3xxxF3 gives better protection as its inter-conductor protection voltage is twice the conductor to ground value.
Relay contacts 3a and 3b connect the line conductors to the SLIC via the TISPPBL3 protector. Closing contacts 3a and 3b connects the
TISPPBL3 protector in parallel with the ring/test protector. As the ring/test protector requires much higher voltages than the TISPPBL3 to
operate, it will only operate when the contacts 3a and 3b are open. Both protectors will divert the same levels of peak surge current, and their
required current ratings should be similar. The TISPPBL3 protector gate reference voltage comes from the SLIC negative supply feed (VB). A
local gate capacitor, C1, sources the gate current pulses caused by fast rising impulses.
TISPPBL3 Voltage Limiting Performance (continued)
TISPPBL3 Programmable Protector
Figure 9. SLIC Voltage Ratings And TISPPBL3 Protection Levels
Time
SLIC MINIMUM VOLTAGE WITHSTAND
AND TISPPBL3 VOLTAGE LIMITING
vs
TIME
0
10
20
30
40
AI6XDF
V
TISPPBL3
TISPPBL3
V
BAT
- 40
V
BAT
- 30
V
BAT
- 20
V
BAT
- 10
V
BAT
1
μ
s
0.25
μ
s
10 ms
0.7 V ISOLATION DIODE (D1)
VOLTAGE DROP FROM V
Bat
Application Circuit
相關PDF資料
PDF描述
TISPPBL3DR-S DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
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相關代理商/技術參數(shù)
參數(shù)描述
TISPPBL3DR-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3D-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3SE 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3SE-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube