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參數(shù)資料
| 型號(hào)： | TIP140 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Complementary Silicon Power Transistors(互補(bǔ)硅功率達(dá)林頓晶體管) |
| 中文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 91K |
| 代理商： | TIP140 |
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
5
ACTIVEREGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ T
C
= 25
°
C
Figure 6. ActiveRegion Safe Operating Area
dc
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
2.0
I
10
10
0.2
5.0
20
1.0
20
T
J
= 150
°
C
50
30
TIP140, 145
TIP141, 146
TIP142, 147
3.0
7.0
15
70
100
I
15
10
1.0
2.0
5.0
7.0
Figure 7. Unclamped Inductive Load
L, UNCLAMPED INDUCTIVE LOAD (mH)
0.5
1.0
2.0
5.0
10
20
50
100
100 mJ
INPUT
MPSU52
50
50
R
BB1
1.5k
R
BB2
= 100
V
BB2
= 0
V
BB1
= 10 V
TUT
V
CE
MONITOR
100 mH
V
CC
= 20 V
I
C
MONITOR
R
S
= 0.1
TEST CIRCUIT
NOTE 1: Input pulse width is increased until I
CM
= 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
V
CE(sat)
20 V
COLLECTOR
VOLTAGE
V
(BR)CER
w
≈
7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP140 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP141T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP140T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP142T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP146T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達(dá)林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP140 | 制造商:Bourns Inc 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP140_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| TIP140F | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:TO-3P Fully Isolated Plastic Package Transistor CDIL |
| TIP140FTU | 功能描述:達(dá)林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP140G | 功能描述:達(dá)林頓晶體管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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