- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384976 > TIP140 (ON SEMICONDUCTOR) Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) PDF資料下載
參數(shù)資料
| 型號： | TIP140 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Darlington Complementary Silicon Power Transistors(互補硅功率達林頓晶體管) |
| 中文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 91K |
| 代理商： | TIP140 |
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
3
2. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
0.55
(I
C
= 30 mA, I
B
= 0)
TIP140, TIP145
80
(V
= 30 Vdc, I
= 0)
(V
CE
= 40 Vdc, I
B
= 0)
TIP140, TIP145
(V
CB
= 80 V, I
E
= 0)
CB
E
CBO
Emitter Cutoff Current (V
BE
= 5.0 V)
I
EBO
2 0
mA
ON CHARACTERISTICS
(Note 2)
(I
C
= 10 A, V
CE
= 4.0 V)
FE
500
CollectorEmitter Saturation Voltage
(I
C
= 5.0 A, I
B
= 10 mA)
V
2.0
Vdc
BE(sat)
(I
C
= 10 A, V
CE
= 4.0 Vdc)
Resistive Load
(See Figure 1)
SWITCHING CHARACTERISTICS
Delay Time
CC
C
I
B1
= I
B2
, R
C
& R
B
Varied, T
J
= 25 C)
Fall Time
t
d
0.15
s
Rise Time
t
r
2.5
s
Storage Time
t
s
s
t
f
2.5
s
Figure 1. Switching Times Test Circuit
10
0.2
Figure 2. Switching Times
I
C
, COLLECTOR CURRENT (AMP)
t
5.0
2.0
0.5
0.1
0.5
1.0
3.0
5.0
10
20
0.2
PNP
NPN
t
f
t
r
t
s
t
d
@ V
BE(off)
= 0
V
2
approx
+12 V
V
1
appox.
8.0 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
25 s
0
R
B
51
D
1
+4.0 V
V
CC
30 V
R
C
TUT
≈
8.0 k
≈
40
SCOPE
for t
d
and t
r
, D1 is disconnected
and V
2
= 0
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25
°
C
For NPN test circuit reverse diode and voltage polarities.
1.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIP140 | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP141T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP140T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP142T | NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(NPN硅外延達林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
| TIP146T | PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt Resistor）(PNP硅外延達林頓晶體管（內(nèi)置基極-射極分流電阻單片結(jié)構(gòu)）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIP140 | 制造商:Bourns Inc 功能描述:TRANSISTOR DARLINGTON TO-220 |
| TIP140_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| TIP140F | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:TO-3P Fully Isolated Plastic Package Transistor CDIL |
| TIP140FTU | 功能描述:達林頓晶體管 RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| TIP140G | 功能描述:達林頓晶體管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。