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參數資料
| 型號： | TIM5359-60SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 116K |
| 代理商： | TIM5359-60SL |
T IM5359-60S L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
V
15
Gate-Source Voltage
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
A
20
W
°
C
°
C
187.5
175
Storage Temperature
PACKAGE OUTLINE (2-16G1B)
-65 to +175
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
2
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| TIM5359-8 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET |
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