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參數(shù)資料
| 型號： | TIM5359-60SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 116K |
| 代理商： | TIM5359-60SL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5359-60SL
TECHNICAL DATA
FEAT URES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
HIGH POWER
P1dB=48.0dBm at 5.3GHz to 5.9GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
HIGH GAIN
G1dB=9.0dB at 5.3GHz to 5.9GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P
1dB
CONDITIONS
UNIT
dBm
MIN. TYP.
47.0
MAX.
48.0
G
1dB
dB
8.0
9.0
I
DS1
Δ
G
η
add
IM
3
A
dB
%
dBc
-42
13.2
42
-45
15.0
±
0.8
V
DS
=10V
f = 5.3 to 5.9GHz
I
DS
set=9.5A
I
DS2
Δ
Tch
Two-Tone Test
Po=36.5dBm
(Single Carrier Level)
(VDS X IDS +Pin-P1dB)
X Rth(c-c)
(Max.)
A
°
C
11.8
100
Recommended Gate Resistance(Rg) : 28
Ω
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 12.0A
V
GSoff
V
DS
=
3V
I
DS
= 200mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -1.0mA
UNIT
S
MIN.
TYP.
20
MAX.
Pinch-off Voltage
V
-1.0
-1.8
-3.0
Saturated Drain Current
A
38
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
0.6
0.8
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
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